VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.125 ohm, -4.5 V, 450 mV
VISHAY
晶体管, MOSFET, N沟道, 6 A, 20 V, 26500 μohm, 4.5 V, 450 mV
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 65 mohm, 4.5 V, 450 mV
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV
VISHAY
场效应管, MOSFET, N沟道, 20V, 6A, 二极管, SOT23
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV
DIODES INC.
晶体管, MOSFET, N沟道, 910 mA, 30 V, 460 mohm, 4.5 V, 450 mV
DIODES INC.
晶体管, MOSFET, N沟道, 910 mA, 30 V, 460 mohm, 4.5 V, 450 mV
VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.125 ohm, -4.5 V, 450 mV
VISHAY
场效应管, MOSFET, N沟道, 20V
VISHAY
晶体管, MOSFET, N沟道, 6 A, 20 V, 26500 μohm, 4.5 V, 450 mV
VISHAY
晶体管, MOSFET, P沟道, -6.8 A, -12 V, 0.016 ohm, -1.8 V, 450 mV
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 65 mohm, 4.5 V, 450 mV