DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, 5.2 A, -12 V, 0.026 ohm, -4.5 V, -0.55 V
INFINEON
晶体管, MOSFET, N沟道, 5.2 A, 55 V, 0.045 ohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 200 V, 800 mohm, 10 V, 4 V
VISHAY
场效应管, MOSFET, N沟道
VISHAY
场效应管, MOSFET, N沟道
INFINEON
晶体管, MOSFET, P沟道, 5.2 A, -30 V, 45 mohm, -10 V, -1 V
VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 200 V, 0.8 ohm, 5 V, 2 V
VISHAY
场效应管, MOSFET, N沟道, 200V, 5.2A D2-PAK
VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 30 V, 0.034 ohm, 4.5 V, 400 mV
INFINEON
晶体管, MOSFET, N沟道, 5.2 A, 150 V, 0.035 ohm, 10 V, 4 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 5.2 A, 20 V, 25 mohm, 4.5 V, 600 mV
NEXPERIA
晶体管, MOSFET, N沟道, 5.2 A, 30 V, 0.017 ohm, 10 V, 1.5 V
NEXPERIA
晶体管, MOSFET, N沟道, 5.2 A, 30 V, 0.017 ohm, 10 V, 1.5 V
VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 30 V, 0.034 ohm, 4.5 V, 400 mV