DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.1 A, 60 V, 500 mohm, 10 V, 2.1 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1 A, 100 V, 500 mohm, 10 V, 2.6 V
VISHAY
场效应管, MOSFET, P沟道, -60V, 5.1A, D-PAK
VISHAY
晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, -4 V
VISHAY
晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, 4 V
VISHAY
场效应管, MOSFET, P沟道, -60V, 6.7A
VISHAY
晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, -4 V
VISHAY
场效应管, MOSFET, P沟道
VISHAY
晶体管, MOSFET, P沟道, 12 A, -200 V, 500 mohm, -10 V, -4 V
VISHAY
晶体管, MOSFET, P沟道, -12 A, -200 V, 500 mohm, -10 V, -4 V
VISHAY
晶体管, MOSFET, P沟道, 1.8 A, -60 V, 500 mohm, -10 V, -4 V
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 1KV, 3.1A, TO-220
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.1 A, 60 V, 500 mohm, 10 V, 2.1 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1 A, 100 V, 500 mohm, 10 V, 2.6 V
VISHAY
晶体管, MOSFET, P沟道, 4.7 A, -60 V, 500 mohm, -10 V, -4 V
VISHAY
晶体管, MOSFET, P沟道, 1.8 A, -60 V, 500 mohm, -10 V, -2 V
VISHAY
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 500 mohm, -10 V, -4 V