TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 7.1 A, 12 V, 0.015 ohm, 4.5 V, 800 mV
INFINEON
晶体管, MOSFET, N沟道, 7.1 A, 500 V, 0.47 ohm, 10 V, 3 V
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 7.1 A, 600 V, 0.98 ohm, 10 V, 3.9 V
VISHAY
MOSFET, DUAL N CHANNEL, 30V, 7.1A, SOIC-8
VISHAY
双路场效应管, MOSFET, 双N沟道, 7.1 A, 30 V, 0.156 ohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 7.1 A, 550 V, 0.47 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 7.1 A, 550 V, 520 mohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 7.1 A, 550 V, 520 mohm, 10 V, 3 V
VISHAY
场效应管, MOSFET, N沟道+P沟道, 20V, SOIC
VISHAY
场效应管, MOSFET, N沟道+P沟道, 20V, 7.1A/-6.2A, SOIC-8, 整卷