STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0114 ohm, 10 V, 4 V
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
INFINEON
晶体管, MOSFET, P沟道, 3.4 A, -40 V, 112 mohm, 10 V, -3 V
INFINEON
晶体管, MOSFET, N沟道, 22 A, 20 V, 0.0094 ohm, 4.5 V, 800 mV
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
INFINEON
双路场效应管, MOSFET, N和P沟道, 2.7 A, 30 V, 110 mohm, 10 V, 1 V
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 170 A, 60 V, 0.0033 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 100 mohm, 4.5 V, 700 mV
INFINEON
双路场效应管, MOSFET, 双N沟道, 145 A, 25 V, 0.0009 ohm, 10 V, 1.6 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 5.4 A, 20 V, 0.03 ohm, 4.5 V, 1.2 V
INFINEON
晶体管, MOSFET, N沟道, 88 A, 100 V, 0.008 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, P沟道, -7 A, -30 V, 0.026 ohm, -10 V, -2.5 V
BROADCOM LIMITED
晶体管, 射频FET, 高线性度, 7 V, 500 mA, 1.5 W, 50 MHz, 6 GHz, SOT-89
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 6.5 mohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 269 A, 75 V, 0.0017 ohm, 10 V, 3.7 V
INFINEON
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0057 ohm, 10 V, 1.8 V
STMICROELECTRONICS
三端双向可控硅, 800 V, 50 mA, 1 W, 1.5 V, TOP-3, 400 A
INFINEON
晶体管, MOSFET, N沟道, 26 A, 200 V, 0.021 ohm, 10 V, 5 V
INFINEON
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0079 ohm, 10 V, 4 V
BROADCOM LIMITED
晶体管, 射频FET, 高线性度, 7 V, 1 A, 2.25 W, 400 MHz, 3.9 GHz, SOT-89
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 274 A, 40 V, 0.0014 ohm, 10 V, 1.7 V
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.036 ohm, 10 V, 4 V
INFINEON
单晶体管, IGBT, N通道, 40 A, 2.36 V, 160 W, 600 V, TO-262, 3 引脚
INFINEON
晶体管, MOSFET, N沟道, 34 A, 150 V, 0.0122 ohm, 10 V, 5 V