规格：MSL MSL 3 - 168小时,
TEXAS INSTRUMENTS
仪器放大器, 2个放大器, 500 μV, 0.04 V/μs, 9 kHz, ± 1.35V 至 ± 18V, SOIC
(EN)
TEXAS INSTRUMENTS
差分放大器, 单电源, 2 放大器, 250 μV, 1 dB, 3 MHz, -40 °C, 85 °C
(EN)
TEXAS INSTRUMENTS
仪器放大器, 1个放大器, 250 μV, 15 V/μs, 3.4 MHz, ± 4.5V 至 ± 18V, SOIC
(EN)
INVENSENSE
音频控制器, 1.6V至3.3V, LGA, 3 引脚, -40 °C
(EN)INFINEON
双路高压侧, 低压侧驱动器, 10V-20V电源, 2.5A输出, 94ns延迟, SOIC-16
(EN)INFINEON
芯片, MOSFET驱动器 高边 & 低边
(EN)
INFINEON
芯片, MOSFET/IGBT驱动器
(EN)
INFINEON
芯片, MOSFET驱动器 3相
(EN)
INFINEON
芯片, 半桥驱动器, 1200V
(EN)
INFINEON
DC-DC Switching Step Down Regulator, Adjustable, 2.5V-21Vin, 0.6V-12Vout, 9Aout, QFN-15
(EN)INFINEON
DC-DC Switching Step Down Regulator, Adjustable, 2.5V-21Vin, 0.6V-12Vout, 9Aout, QFN-15
(EN)
INTEGRATED SILICON SOLUTION (ISSI)
芯片, 存储器, SDRAM, 256MB, 143MHZ, TFBGA-90
(EN)
INTEGRATED SILICON SOLUTION (ISSI)
芯片, 存储器, SRAM, 16MB, 10NS, 48BGA
(EN)
INTEGRATED SILICON SOLUTION (ISSI)
芯片, 存储器, SRAM, 16MB, 10NS, 44TSOPII
(EN)
INTEGRATED SILICON SOLUTION (ISSI)
芯片, 存储器, SRAM, 256KB, 45NS, TSOP-28
(EN)INTEGRATED SILICON SOLUTION (ISSI)
芯片, 存储器, SRAM, 8MB, 55NS, 44TSOPII
(EN)
INTERSIL
易失性数字电位器, 100 kohm, 四, I2C, 线性, ± 20%, 1.7 V
(EN)
INTERSIL
芯片, 线性稳压器, 可调, 10-DFN
(EN)INTERSIL
固定电压稳压器, LDO, 2.2V至6V, 130mV压差, 1.8V输出, 1A输出, DFN-10
(EN)INTERSIL
固定电压稳压器, LDO, 2.2V至6V, 130mV压差, 2.5V输出, 1A输出, DFN-10
(EN)
INTERSIL
直流-直流开关同步降压稳压器, 可调, 2.7V-5.5V输入, 600mV-5.5V/6A输出, 1 MHz, QFN-20
(EN)
INTERSIL
直流-直流开关同步降压稳压器, 可调, 2.7V-5.5V输入, 600mV-5.5V/4A输出, 2 MHz, TQFN-16
(EN)INTERSIL
DC-DC Switching Step Down Regulator, Adjustable, 2.7V-5.5Vin, 0.6V-5.5Vout, 5Aout, TQFN-16
(EN)INTERSIL
芯片, 驱动器, FET, 半桥, 16-SOIC
(EN)
