VISHAY
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 29 A, 600 V, 0.102 ohm, 10 V, 3.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 29 A, 600 V, 0.102 ohm, 10 V, 3.5 V
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.089 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.089 ohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, N沟道, 25 A, 400 V, 0.14 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V
VISHAY
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.09 ohm, 10 V, 3 V
ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 2.1 V, 278 W, 1.2 kV, TO-247, 3 引脚
VISHAY
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V