VISHAY
单管二极管 齐纳, 5.1 V, 2.3 W, DO-219AB, 2 引脚, 150 °C
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 6SON
VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -30 V, 0.158 ohm, -10 V, -3 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 5A, 0.024OHM, SON-6
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 30 V, 0.027 ohm, 10 V, 1.6 V
VISHAY
场效应管, MOSFET, P沟道, -30V, -2.7A
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0013 ohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0015 ohm, 10 V, 3 V
VISHAY
场效应管, MOSFET, P沟道, -60V, 19A, TO-252
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 25 V, 0.019 ohm, 8 V, 1.2 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4.6 A, 20 V, 37 mohm, 4.5 V, 700 mV
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV
VISHAY
单管二极管 齐纳, 3.6 V, 2.3 W, DO-219AB, 5 %, 2 引脚, 150 °C
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
NEXPERIA
双极晶体管阵列, NPN, PNP, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 33 mohm, 10 V, 3 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.6 A, -60 V, 0.145 ohm, -10 V, -4 V