DIODES INC.
晶体管, MOSFET, N沟道, 4.2 A, 30 V, 24 mohm, 10 V, 1.5 V
DIODES INC.
晶体管, MOSFET, P沟道, -4.2 A, -20 V, 0.04 ohm, -4.5 V, -900 mV
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 4 A, 20 V, 60 mohm, 4.5 V, 800 mV
DIODES INC.
晶体管, MOSFET, P沟道, 4.2 A, -20 V, 45 mohm, -4.5 V, -500 mV
VISHAY
MOSFET, N CHANNEL, 30V, 9.5A, SOIC-8
VISHAY
晶体管, MOSFET, N沟道, 13.5 A, 30 V, 0.007 ohm, 10 V, 3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.6 A, 12 V, 0.063 ohm, 4.5 V, 850 mV
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -5.4 A, -12 V, 0.029 ohm, -4.5 V, -650 mV
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 50 mohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, 双P沟道, 4.2 A, -20 V, 0.049 ohm, -4.5 V, -700 mV
STMICROELECTRONICS
单晶体管 双极, PNP, 60 V, 130 MHz, 1.4 W, -3 A, 160 hFE
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 10 A, 24 V, 0.0105 ohm, 4.5 V, 1.3 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -4.4 A, -20 V, 0.037 ohm, -4.5 V, -1 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.3 A, -30 V, 0.069 ohm, -10 V, -1.9 V
DIODES INC.
晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.06 ohm, -4.5 V, -600 mV
INFINEON
双路场效应管, MOSFET, 双P沟道, -5.1 A, -30 V, 0.135 ohm, -10 V, -1.8 V
DIODES INC.
晶体管, MOSFET, P沟道, 3.5 A, -30 V, 59 mohm, -10 V, -600 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -40 V, 0.01 ohm, -10 V, -1.4 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 1 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5.9 A, 30 V, 0.022 ohm, 10 V, 1.3 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.0125 ohm, 10 V, 2 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 7.1 A, 12 V, 0.015 ohm, 4.5 V, 800 mV