FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 300 A, 2.45 V, 1 kW, 600 V, Module
INFINEON
晶体管, IGBT阵列&模块, N沟道, 280 A, 1.75 V, 1 kW, 1.2 kV, Module
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q3-Class, N沟道, 24 A, 1 kV, 0.44 ohm, 10 V, 6.5 V
晶体管, IGBT阵列&模块, N沟道, 200 A, 1.75 V, 1 kW, 1.2 kV, Module
VISHAY
静电保护装置, 58.1 V, DO-219AB, 2 引脚, 36 V, 1 kW
静电保护装置, 9.2 V, DO-219AB, 2 引脚, 5 V, 1 kW
静电保护装置, 17 V, DO-219AB, 2 引脚, 10 V, 1 kW
静电保护装置, 23.2 V, DO-219AB, 2 引脚, 14 V, 1 kW
静电保护装置, 29.2 V, DO-219AB, 2 引脚, 18 V, 1 kW
静电保护装置, 77.4 V, DO-219AB, 2 引脚, 48 V, 1 kW
静电保护装置, 12.9 V, DO-219AB, 2 引脚, 7.5 V, 1 kW