DIODES INC.
晶体管, MOSFET, P沟道, -3 A, -60 V, 125 mohm, -10 V, -3 V
DIODES INC.
双极晶体管阵列, 通用, 双路, NPN, PNP, 30 V, 1.1 W, 1.5 A, 300 hFE, SOT-23
VISHAY
双路场效应管, MOSFET, 双N沟道, 2.9 A, 30 V, 0.072 ohm, 10 V, 1 V
NEXPERIA
单晶体管 双极, PNP, -40 V, 110 MHz, 1.1 W, -4 A, 200 hFE
NEXPERIA
单晶体管 双极, NPN, 40 V, 150 MHz, 1.1 W, 4 A, 300 hFE
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4 A, 20 V, 45 mohm, 4.5 V, 1.2 V
DIODES INC.
晶体管, MOSFET, P沟道, 1.6 A, -100 V, 350 mohm, -10 V, -2 V
VISHAY
场效应管, MOSFET, P沟道, -40V, 4.5A, SOIC
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 2.9 A, 20 V, 0.058 ohm, 4.5 V, 600 mV
DIODES INC.
双极晶体管阵列, 双路, NPN, PNP, 60 V, 1.1 W, 1 A, 100 hFE, SOT-23
VISHAY
双路场效应管, MOSFET, 双P沟道, -4.9 A, -20 V, 0.025 ohm, -2.5 V, -1.4 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.4 A, 20 V, 0.032 ohm, 4.5 V, 1 V
VISHAY
晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V
VISHAY
晶体管, P沟道
DIODES INC.
晶体管, MOSFET, N沟道, 5.4 A, 20 V, 40 mohm, 4.5 V, 700 mV
VISHAY
晶体管, MOSFET, P沟道, -3.9 A, -20 V, 0.041 ohm, -2.5 V, -1.4 V
DIODES INC.
单晶体管 双极, PNP, 12 V, 55 MHz, 1.1 W, 4 A, 500 hFE
VISHAY
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 73 mohm, -10 V, -1 V
VISHAY
场效应管, MOSFET, 双P沟道
NXP
晶体管, BISS, NPN, 60V, 3A, 6-SOT-457
VISHAY
晶体管, P沟道