VISHAY
晶体管, MOSFET, N沟道, 3.9 A, 40 V, 0.036 ohm, 10 V, 3 V
NEXPERIA
晶体管, MOSFET, N沟道, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV
VISHAY
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.04 ohm, -4.5 V, -900 mV
VISHAY
晶体管, MOSFET, P沟道, -3 A, -40 V, 0.065 ohm, -10 V, -3 V
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 60 V, 160 MHz, 750 mW, 1 A, 200 hFE
VISHAY
晶体管, P沟道
VISHAY
晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.063 ohm, -10 V, -3 V
VISHAY
场效应管, MOSFET, P沟道, -150V, 690mA, TO-236
VISHAY
晶体管, MOSFET, P沟道, -530 mA, -150 V, 1 ohm, -10 V, -4.5 V
VISHAY
场效应管, MOSFET, P沟道, -3A, -12V, 750mW
VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 10 V, 150 MHz, 750 mW, 2 A, 200 hFE
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV
VISHAY
场效应管, MOSFET, P沟道, -3.2A, -30V, 1.25W
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 15 V, 750 mW, 50 mA, 100 hFE, SOIC
VISHAY
场效应管, MOSFET, N沟道, 3A, 40V, 750mW
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 60 V, 160 MHz, 750 mW, 1 A, 200 hFE
VISHAY
场效应管, MOSFET, P沟道, -20V, 4.7A TO-236
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -12 V, 0.084 ohm, -4.5 V, -700 mV
VISHAY
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 33 mohm, 4.5 V, 950 mV
VISHAY
场效应管, MOSFET, N沟道, 30V, 4A, TO-236
VISHAY
晶体管, MOSFET, N沟道, 3.9 A, 20 V, 0.025 ohm, 4.5 V, 850 mV
DIODES INC.
晶体管, MOSFET, P沟道, 200 mA, -240 V, 15 ohm, -10 V, -1.4 V