TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 0.0076Ω, 100A, TO-220-3
INFINEON
晶体管, MOSFET, N沟道, 100 A, 120 V, 0.0065 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.084 ohm, 10 V, 3.5 V
INFINEON
单晶体管, IGBT, 8 A, 1.65 V, 70 W, 650 V, TO-220, 3 引脚
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0028 ohm, 10 V, 2.8 V
INFINEON
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 0.085 ohm, 10 V, 3.5 V
ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 1.5 V, 117 W, 600 V, TO-220, 3 引脚
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 560 V, 0.85 ohm, 10 V, 3 V
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 450 V, 4 MHz, 50 W, 2 A, 4 hFE
INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 187W, TO-220-3
INFINEON
晶体管, MOSFET, N沟道, 21 A, 560 V, 0.16 ohm, 10 V, 3 V
ON SEMICONDUCTOR
达林顿双极晶体管
INFINEON
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.22 ohm, 10 V, 3 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 550 V, 250 mohm, 10 V, 4 V
STMICROELECTRONICS
单晶体管, IGBT, 20 A, 2.5 V, 60 W, 600 V, TO-220, 3 引脚
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0074 ohm, 10 V, 2.7 V
INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0018 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 70 A, 80 V, 0.0084 ohm, 10 V, 2.8 V
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.003 ohm, 10 V, 1.7 V
INFINEON
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.155 ohm, 10 V, 3.5 V
ON SEMICONDUCTOR
单晶体管 双极, NPN, 90 V, 85 W, 20 A