TOSHIBA
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0026 ohm, -10 V, -800 mV
TOSHIBA
晶体管, MOSFET, P沟道, -34 A, -30 V, 0.0037 ohm, -10 V, -800 mV
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 35 A, 60 V, 0.0043 ohm, 10 V, 1.3 V
ROHM
晶体管, MOSFET, P沟道, -7.5 A, -30 V, 0.018 ohm, -10 V, -2.5 V
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 5 A, 60 V, 0.034 ohm, 10 V, 2.5 V
ROHM
晶体管, MOSFET, 低电压, N沟道, 9 A, 30 V, 11 mohm, 10 V, 2.5 V
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 28 A, 60 V, 0.0066 ohm, 10 V, 1.3 V
TOSHIBA
晶体管, MOSFET, 功率, P沟道, -16 A, -30 V, 0.0039 ohm, -10 V, -800 mV
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 500 mA, SOP
ROHM
双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.036 ohm, 10 V, 2.5 V
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 24 A, 60 V, 0.009 ohm, 10 V, 1.3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 450 mA, 400 V, 3.2 ohm, 10 V, 4 V
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 15 A, 60 V, 0.0139 ohm, 10 V, 1.3 V
TEXAS INSTRUMENTS
芯片, 达林顿晶体管阵列, NPN
ROHM
晶体管, MOSFET, P沟道, -6 A, -45 V, 0.026 ohm, -10 V, -2.5 V
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOP
ROHM
双路场效应管, MOSFET, 双N沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V
ROHM
晶体管, MOSFET, N沟道, 10 A, 20 V, 0.008 ohm, 4.5 V, 1 V
ROHM
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.07 ohm, 10 V, 2.5 V
ROHM
双路场效应管, MOSFET, 双N沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V
ROHM
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 0.027 ohm, 10 V, 2.5 V
ROHM
双路场效应管, MOSFET, 双N沟道, 6 A, 45 V, 0.018 ohm, 10 V, 2.5 V
ROHM
晶体管, MOSFET, N沟道, 7 A, 45 V, 0.018 ohm, 10 V, 2.5 V