ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 7.3 A, -30 V, 0.026 ohm, -10 V, 1.5 V
NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -30 V, 0.43 ohm, -4.5 V, -700 mV
NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -30 V, 0.43 ohm, -4.5 V, -700 mV
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 3.5A SOT-23
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.014 ohm, -10 V, -1.8 V
INFINEON
晶体管, MOSFET, P沟道, -760 mA, -30 V, 0.6 ohm, -10 V, -1 V
VISHAY
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.0074 ohm, -4.5 V, -1.2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3.4 A, -30 V, 0.105 ohm, -10 V, -1.8 V
VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -30 V, 24 mohm, -10 V, -3 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.2 A, -30 V, 0.09 ohm, -10 V, -1.15 V
VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -30 V, 0.158 ohm, -10 V, -3 V
INFINEON
晶体管, MOSFET, P沟道, -78.6 A, -30 V, 0.0061 ohm, -10 V, -2.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.3 A, -30 V, 0.042 ohm, -10 V, -1.7 V
INFINEON
晶体管, MOSFET, P沟道, -20 A, -30 V, 3.9 mohm, -10 V, -1.8 V
TOSHIBA
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0026 ohm, -10 V, -800 mV
VISHAY
场效应管, MOSFET, P沟道, -30V, -18A, POWERPAK1212-8
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -4.6 A, -30 V, 0.07 ohm, -10 V, -1 V
NEXPERIA
晶体管, MOSFET, P沟道, -2.4 A, -30 V, 0.1 ohm, -10 V, -1.5 V
VISHAY
晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.063 ohm, -10 V, -3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.041 ohm, -10 V, -1.7 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11 A, -30 V, 0.0108 ohm, -10 V, -2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.015 ohm, -10 V, -1.9 V
INFINEON
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.098 ohm, -10 V, -2.5 V
VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0058 ohm, -10 V, -1.2 V
INFINEON
晶体管, MOSFET, P沟道, 4.6 A, -30 V, 70 mohm, -10 V, -3 V