VISHAY
场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.013 ohm, -10 V, -1 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -8.2 A, -20 V, 0.0146 ohm, -4.5 V, -1 V
VISHAY
场效应管, MOSFET, P沟道, -20V, 4.7A TO-236
DIODES INC.
晶体管, MOSFET, P沟道, -3 A, -60 V, 0.096 ohm, -10 V, -1 V
DIODES INC.
晶体管, MOSFET, P沟道, 1.1 A, -30 V, 350 mohm, 10 V, -1 V
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5.4 A, -30 V, 0.045 ohm, -10 V, -1 V
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双P沟道, -2 A, -20 V, 0.15 ohm, -4.5 V, -1 V
DIODES INC.
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.092 ohm, -4.5 V, -1 V
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
DIODES INC.
晶体管, MOSFET, P沟道, -950 mA, -20 V, 150 mohm, -4.5 V, -1 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 双P沟道, 2W, 8-SOIC
VISHAY
晶体管, MOSFET, P沟道, -35 A, -40 V, 0.0097 ohm, -10 V, -1 V
DIODES INC.
晶体管, MOSFET, P沟道, -3.7 A, -60 V, 0.055 ohm, -10 V, -1 V
VISHAY
晶体管, MOSFET, P沟道, 12 A, -30 V, 0.0122 ohm, -10 V, -1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.039 ohm, -4.5 V, -1 V
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -1.7 A, -60 V, 0.39 ohm, -10 V, -1 V
INFINEON
场效应管, MOSFET
VISHAY
晶体管, MOSFET, P沟道, -5.9 A, -20 V, 0.0265 ohm, -4.5 V, -1 V
VISHAY
晶体管, MOSFET, P沟道, -8.8 A, -100 V, 0.162 ohm, -10 V, -1 V
VISHAY
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.032 ohm, -4.5 V, -1 V
VISHAY
场效应管, MOSFET, P沟道, -5.7A, -30V, 2.5W