TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 25 V, 0.019 ohm, 8 V, 1.2 V
DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 50 V, 1.4 ohm, 10 V, 1.2 V
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 3.5 ohm, 10 V, 1.2 V
NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 10 V, 1.2 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 25 V, 0.019 ohm, 8 V, 1.2 V
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 30V, 60A, SON
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 6.7 A, 30 V, 0.011 ohm, 10 V, 1.2 V
PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, 双N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.3 ohm, 4.5 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 40 V, 0.01 ohm, 4.5 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, N沟道
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0049 ohm, 10 V, 1.2 V
INFINEON
晶体管, MOSFET, N沟道, 80 A, 40 V, 3.1 mohm, 10 V, 1.2 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 8.8 mohm, 10 V, 1.2 V
INFINEON
晶体管, MOSFET, P沟道, 15 A, -20 V, 8.2 mohm, 4.5 V, 1.2 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 5.4 A, 20 V, 0.03 ohm, 4.5 V, 1.2 V
INFINEON
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 45 mohm, 4.5 V, 1.2 V
INFINEON
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 30 mohm, 4.5 V, 1.2 V
INFINEON
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 0.03 ohm, 4.5 V, 1.2 V
INFINEON
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 0.03 ohm, 4.5 V, 1.2 V