INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 100 V, 0.15 ohm, 10 V, 2 V
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 5 V
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 5 V
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 5 V
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 5 V
VISHAY
场效应管, MOSFET, N沟道, 600V, 21A, TO-220F
INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 0.15 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -9.4 A, -60 V, 0.15 ohm, -10 V, -4 V
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 650 V, 0.15 ohm, 10 V, 4 V
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.3 A, -12 V, 0.15 ohm, -4.5 V, -950 mV
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.3 A, -12 V, 0.15 ohm, -4.5 V, -950 mV
INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 650 V, 0.15 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 0.15 ohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, P沟道, -1.49 A, -30 V, 0.15 ohm, -10 V, -3 V
VISHAY
晶体管, MOSFET, P沟道, -1.49 A, -30 V, 0.15 ohm, -10 V, -3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 650 V, 0.15 ohm, 10 V, 4 V
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -2.6 A, -100 V, 0.15 ohm, -10 V, -2 V
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 1.8 A, 60 V, 0.15 ohm, 5 V, 1 V
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 2 A, 60 V, 0.15 ohm, 5 V, 1 V