NEXPERIA
双极晶体管阵列, AEC-Q101, 双PNP, -45 V, 350 mW, -100 mA, 200 hFE, DFN1010B
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 1.33 A, 20 V, 0.3 ohm, 5 V, 900 mV
ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, 双PNP, -45 V, 300 mW, -200 mA, 125 hFE, SC-70
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 3.5 A, 20 V, 0.0417 ohm, 4.5 V, 1.5 V
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
NEXPERIA
双极晶体管阵列, AEC-Q101, NPN, PNP, 45 V, 230 mW, 100 mA, 200 hFE, DFN1010B
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.8 A, -20 V, 27 mohm, -4.5 V, -700 mV
ON SEMICONDUCTOR
Dual MOSFET, Dual P Channel, -880 mA, -20 V, 0.215 ohm, -4.5 V, -1.2 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.5 A, 20 V, 0.035 ohm, 4.5 V
VISHAY
晶体管, MOSFET, N沟道, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 13.1 A, 100 V, 0.049 ohm, 10 V, 3.2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 750 mA, 30 V, 0.25 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -12 V, 0.084 ohm, -4.5 V, -700 mV
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 260 mA, 30 V, 2.8 ohm, 10 V, 1.5 V
VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.015 ohm, -4.5 V, -1.2 V
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双P沟道, -2 A, -20 V, 0.15 ohm, -4.5 V, -1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.0236 ohm, 4.5 V, 810 mV
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, Dual NPN, 45 V, 100 MHz, 380 mW, 100 mA, 150 hFE
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 80 mohm, -4.5 V, -700 mV