DIODES INC.
单晶体管 双极, NPN, PNP, 45 V, 300 MHz, 200 mW, -100 mA, 290 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.1 A, 200 V, 0.605 ohm, 10 V, 4 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 2 A, 20 V, 0.105 ohm, 4.5 V, 1.3 V
VISHAY
场效应管, P通道, MOSFET
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 6.9 A, 20 V, 0.015 ohm, 4.5 V, 650 mV
DIODES INC.
双极晶体管阵列, PNP, -150 V, 300 mW, -200 mA, 60 hFE, SOT-26
VISHAY
双路场效应管, MOSFET, 双N沟道, 480 mA, 30 V, 0.54 ohm, 10 V, 1 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4.5 A, -30 V, 0.056 ohm, -4.5 V, -1.3 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 30 V, 0.027 ohm, 10 V, 1.6 V
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.8 A, 20 V, 0.028 ohm, 4.5 V, 650 mV
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.3 A, -30 V, 0.069 ohm, -10 V, -1.9 V
TOSHIBA
晶体管, MOSFET, N沟道, 1.1 A, 20 V, 160 mohm, 4 V, 1.1 V
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 260 mA, 30 V, 2.8 ohm, 10 V, 1.5 V
NEXPERIA
双极晶体管阵列, AEC-Q101, 双NPN, 65 V, 300 mW, 100 mA, 200 hFE, SOT-363
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1 A, 100 V, 500 mohm, 10 V, 2.6 V
ON SEMICONDUCTOR
二极管 小信号, 三独立式, 85 V, 100 mA, 1.2 V, 3 ns, 1 A
INFINEON
晶体管, MOSFET, P沟道, -7.2 A, -20 V, 25 mohm, -4.5 V, -800 mV
ON SEMICONDUCTOR
双极晶体管阵列, 通用, 双PNP, -65 V, 380 mW, -100 mA, 220 hFE, SOT-363
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 3.4 A, 30 V, 0.038 ohm, 10 V, 1 V
NEXPERIA
双极晶体管阵列, AEC-Q101, 双PNP, -60 V, 400 mW, -600 mA, 75 hFE, SOT-363
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 280 mA, 60 V, 1.6 ohm, 5 V, 1.76 V
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 870 mA, 20 V, 0.3 ohm, 4.5 V, 1 V