INFINEON
晶体管, MOSFET, P沟道, -13 A, -30 V, 0.03 ohm, -10 V, -1.8 V
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 279 A, 60 V, 0.0016 ohm, 10 V, 1.9 V
NEXPERIA
晶体管, MOSFET, N沟道, 20 A, 30 V, 4.4 mohm, 10 V, 3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 349 A, 60 V, 0.0013 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道, 55 A, 30 V, 0.019 ohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, P沟道, 3.6 A, -20 V, 90 mohm, -10 V, -1 V
INFINEON
单晶体管, IGBT, N通道, 40 A, 1.7 V, 180 W, 1.2 kV, TO-247AC, 3 引脚
INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0033 ohm, 10 V, 4 V
INFINEON
单晶体管, IGBT, N通道, 140 A, 1.65 V, 483 W, 600 V, TO-247AC, 3 引脚
INFINEON
单晶体管, IGBT, N通道, 100 A, 1.7 V, 420 W, 1.2 kV, TO-247AC, 3 引脚
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
INFINEON
单晶体管, IGBT, N通道, 12 A, 1.7 V, 77 W, 600 V, TO-252AA, 3 引脚
INFINEON
晶体管, MOSFET, P沟道, 4 A, -20 V, 0.0471 ohm, 4.5 V, -1.2 V
INFINEON
晶体管, MOSFET, N沟道, 53 A, 55 V, 0.0165 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.012 ohm, 10 V, 4 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 212 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
INFINEON
晶体管, MOSFET, N沟道, 62 A, 200 V, 0.022 ohm, 10 V, 5 V
INFINEON
单晶体管, IGBT, N通道, 21 A, 1.7 V, 100 W, 650 V, TO-220AB, 3 引脚
INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 30 V, 0.03 ohm, 10 V, 1 V
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 80 V, 800 mW, 1 A, 1000 hFE
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 80 V, 800 mW, 1 A, 1000 hFE
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 80 V, 800 mW, 1 A, 1000 hFE
INFINEON
晶体管, MOSFET, P沟道, 3.4 A, -40 V, 112 mohm, 10 V, -3 V