NXP
晶体管, 射频FET, 40 V, 2 A, 31.25 W, 450 MHz, 520 MHz, PLD-1.5
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, DIP
WOLFSPEED
功率场效应管, MOSFET, N沟道, 22 A, 900 V, 0.12 ohm, 15 V, 2.1 V
INFINEON
晶体管, MOSFET, N沟道, 17 A, 25 V, 0.0038 ohm, 20 V, 1.9 V
VISHAY
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.022 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 17 A, 30 V, 0.0028 ohm, 10 V, 1 V
INFINEON
功率场效应管, MOSFET, N沟道, 60 A, 650 V, 0.04 ohm, 10 V, 3 V
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, DIP
ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, NPN, 40 V, 1 W, 200 mA, 30 hFE, SOIC
INFINEON
晶体管, MOSFET, N沟道, 30 A, 200 V, 0.075 ohm, 10 V, 4 V
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 40 V, 215 MHz, 2 W, 3 A, 100 hFE
VISHAY
晶体管, MOSFET, P沟道, -120 A, -60 V, 0.0056 ohm, -10 V, -2 V
INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0036 ohm, 10 V, 4 V
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -60 V, 75 MHz, 800 mW, -2 A, 40 hFE
INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0049 ohm, 10 V, 2.8 V
WOLFSPEED
功率场效应管, MOSFET, N沟道, 5.3 A, 1.7 kV, 1 ohm, 20 V, 2.6 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0046 ohm, 10 V, 2.8 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 3.5 A, 20 V, 0.075 ohm, 4.5 V, 500 mV
INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0051 ohm, 10 V, 1.9 V
BROADCOM LIMITED
二极管, 射频/PIN, 6引脚
INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V
INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
STMICROELECTRONICS
三端双向可控硅, 600 V, 35 mA, 1 W, 1.3 V, TO-263, 250 A