VISHAY
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.022 ohm, 10 V, 2 V
INFINEON
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.22 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 0.0026 ohm, 10 V, 3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0032 ohm, 10 V, 1.3 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.05 ohm, -10 V, -1 V
ON SEMICONDUCTOR
单晶体管 双极, AEC-Q101, PNP, -40 V, 160 MHz, 2 W, -3 A, 100 hFE
VISHAY
晶体管, MOSFET, P沟道, -1.6 A, -60 V, 0.23 ohm, -10 V, -2 V
WOLFSPEED
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.28 ohm, 15 V, 2.1 V
WOLFSPEED
功率场效应管, MOSFET, N沟道, 35 A, 900 V, 0.065 ohm, 15 V, 2.1 V
INFINEON
功率场效应管, MOSFET, N沟道, 36 A, 900 V, 0.1 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 75 A, 30 V, 0.004 ohm, 10 V, 800 mV
INFINEON
晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 5.1 A, 900 V, 0.94 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 88 A, 200 V, 0.0099 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 39 A, 600 V, 0.068 ohm, 10 V, 3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 2 A, 800 V, 2.4 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 79 A, 100 V, 0.0026 ohm, 10 V, 2.7 V
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.39 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0027 ohm, 10 V, 1.7 V
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.046 ohm, 10 V, 1 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.25 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 12 A, 30 V, 7 mohm, 10 V, 1.8 V