ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 28 A, 30 V, 0.025 ohm, 10 V, 1 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.02 ohm, -10 V, -1 V
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 15 A, 40 V, 0.028 ohm, 10 V, 1 V
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 9 A, 60 V, 0.072 ohm, 10 V, 1 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 45 A, 30 V, 0.012 ohm, 10 V, 1 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.009 ohm, 10 V, 1 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -6 A, -30 V, 0.05 ohm, -10 V, -1 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 32 A, 40 V, 0.02 ohm, 10 V, 1 V
ON SEMICONDUCTOR
单晶体管 双极, NPN, 20 V, 60 MHz, 1.5 W, 1 A, 50 hFE
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 20 V, 60 MHz, 1.5 W, 1 A, 50 hFE
ON SEMICONDUCTOR
单晶体管 双极, NPN, 20 V, 60 MHz, 1.5 W, 1 A, 50 hFE
INFINEON
晶体管 双极-射频, 双NPN, 12 V, 8 GHz, 450 mW, 65 mA, 70 hFE
INFINEON
晶体管, MOSFET, N沟道, 90 A, 80 V, 0.0037 ohm, 10 V, 2.8 V
INFINEON
晶体管, MOSFET, N沟道, 45 A, 150 V, 0.0131 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00085 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 2.1 mohm, 4.5 V, 950 mV
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0029 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0029 ohm, 10 V, 3.1 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0033 ohm, 10 V, 2.8 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0033 ohm, 10 V, 2.8 V
INFINEON
晶体管, MOSFET, N沟道, 80 A, 20 V, 0.0035 ohm, 4.5 V, 950 mV
INFINEON
晶体管, MOSFET, N沟道, 80 A, 20 V, 0.0035 ohm, 4.5 V, 950 mV
INFINEON
晶体管, MOSFET, N沟道, 57 A, 30 V, 0.0043 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0063 ohm, -10 V, -1.5 V