ON SEMICONDUCTOR
达林顿晶体管 阵列, NPN, X7, 50V, 16-SOIC
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 20 V, 1 W, SOD-123F, 5 %, 2 引脚, 85 °C
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 13 V, 1 W, SOD-123F, 5 %, 2 引脚, 85 °C
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 4.7 V, 1 W, SOD-123F, 5 %, 2 引脚, 85 °C
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.085 ohm, 4 V, 850 mV
ON SEMICONDUCTOR
晶体管阵列
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 43 V, 1 W, SOD-123F, 5 %, 2 引脚, 85 °C
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 33 V, 2 W, SOD-128, 5 %, 2 引脚, 85 °C
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 5.6 V, 2 W, SOD-128, 5 %, 2 引脚, 85 °C
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 51 V, 1 W, SOD-123F, 5 %, 2 引脚, 85 °C
STMICROELECTRONICS
双极晶体管阵列, 达林顿, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC
STMICROELECTRONICS
Bipolar (BJT) Array Transistor, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.004 ohm, 10 V, 1.4 V
ON SEMICONDUCTOR
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
ON SEMICONDUCTOR
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 8.2 V, 1 W, SOD-123F, 5 %, 2 引脚, 85 °C
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 2.4 V, 1 W, SOD-123F, 5 %, 2 引脚, 85 °C
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 80 V, 1 W, 1.5 A, DIP
ON SEMICONDUCTOR
双极晶体管阵列, 达林顿, NPN, 2 V, 500 mA, 1000 hFE, SOIC
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 3.9 V, 1 W, SOD-123F, 5 %, 2 引脚, 85 °C
PANASONIC ELECTRONIC COMPONENTS
DIODE, ULTRAFAST RECOVERY, 1.5A, 30V, SOD-123
ANALOG DEVICES
双极晶体管阵列, NPN, 40 V, 20 mA, 300 hFE, TO-78