DIODES INC.
单晶体管 双极, 达林顿, NPN, 120 V, 150 MHz, 2 W, 1.5 A, 5000 hFE
INFINEON
双路场效应管, MOSFET, 双P沟道, -2.3 A, -20 V, 0.19 ohm, -10 V, -3 V
INFINEON
场效应管, MOSFET
ROHM
单晶体管 双极, AEC-Q101, PNP, -50 V, 400 MHz, 2 W, -1 A, 180 hFE
VISHAY
晶体管, MOSFET, N沟道, 4.1 A, 60 V, 0.082 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 450 mA, 400 V, 3.2 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N & P CHANNEL, 30V, 0.028OHM, 6A, SOIC-8
ROHM
单晶体管 双极, AEC-Q101, NPN, 50 V, 360 MHz, 2 W, 2 A, 180 hFE
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 100 mohm, 10 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 300 V, 10 MHz, 2 W, 1 A, 30 hFE
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -2.5 A, -30 V, 0.094 ohm, -10 V, -1.87 V
VISHAY
晶体管, MOSFET, N沟道, 6 A, 20 V, 0.024 ohm, 4.5 V, 600 mV
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 18 V, 2 W, SOD-128, 5 %, 2 引脚, 85 °C
ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 40 MHz, 2 W, -10 A, 40 hFE
DIODES INC.
单晶体管 双极, 达林顿, PNP, 120 V, 160 MHz, 2 W, -2 A, 3000 hFE
INFINEON
场效应管, MOSFET
ON SEMICONDUCTOR
单晶体管 双极, PNP, 375 V, 10 MHz, 2 W, 1 A, 10 hFE