ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1.2 A, 20 V, 0.16 ohm, 4.5 V, 800 mV
INFINEON
晶体管, MOSFET, N沟道, 230 mA, 60 V, 1.7 ohm, 10 V, -2.8 V
MULTICOMP
单晶体管 双极, 高速开关, NPN, 15 V, 500 MHz, 360 mW, 500 mA, 40 hFE
MULTICOMP
单晶体管 双极, 开关, NPN, 15 V, 500 MHz, 360 mW, 200 mA, 40 hFE
NEXPERIA
晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.7 ohm, 10 V, 1.2 V
INFINEON
晶体管, MOSFET, N沟道, 230 mA, 60 V, 1.7 ohm, 10 V, -2.8 V
INFINEON
晶体管, MOSFET, N沟道, 100 mA, 240 V, 7.7 ohm, 10 V, 1.4 V
MULTICOMP
单晶体管 双极, PNP, -60 V, 360 mW, 200 mA, 50 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 170 mA, 100 V, 1.2 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -130 mA, -50 V, 1.2 ohm, -5 V, -1.7 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 220 mA, 50 V, 0.7 ohm, 10 V, 1.3 V
NTE ELECTRONICS
射频场效应管, 双栅极, N沟道, 20V, TO72
VISHAY
场效应管, N通道, MOSFET, 整卷
MICROCHIP
芯片, 场效应管, MOSFET, 耗尽模式, 350V, 35Ω, 3-SOT-23, T/R
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -60V, -120mA, SOT-23, 整卷
NEXPERIA
晶体管, MOSFET, P沟道, -1.2 A, -20 V, 0.35 ohm, -4.5 V, -700 mV
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, 60V, 180mA, SOT-23, 整卷
NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
VISHAY
晶体管, MOSFET, N沟道, 200 mA, 240 V, 2.2 ohm, 10 V, 1.65 V
VISHAY
场效应管, MOSFET, N沟道
MULTICOMP
双极晶体管