DIODES INC.
单晶体管 双极, POWERDI?5, NPN, 100 V, 130 MHz, 3.2 W, 6 A, 230 hFE
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -5.7 A, -60 V, 0.037 ohm, -10 V, -3 V
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 11 A, 60 V, 0.0101 ohm, 10 V, 2.3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 1.8 V
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 7.6 A, 60 V, 0.019 ohm, 10 V, 2.5 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0078 ohm, 10 V, 2.8 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.01 ohm, 10 V, 3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.01 ohm, 10 V, 3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 2.7 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 2.7 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0078 ohm, 10 V, 2.8 V
DIODES INC.
单晶体管 双极, POWERDI?5, NPN, 60 V, 130 MHz, 3.2 W, 6 A, 200 hFE
DIODES INC.
单晶体管 双极, POWERDI?5, NPN, 100 V, 130 MHz, 3.2 W, 6 A, 230 hFE
DIODES INC.
单晶体管 双极, POWERDI?5, PNP, -140 V, 120 MHz, 3.2 W, -4 A, 225 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 60 V, 23 mohm, 10 V, 2.5 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 9A, TO-252, 整卷
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 276 A, 60 V, 0.00093 ohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, P沟道, -5.97 A, -20 V, 50 mohm, -4.5 V, -600 mV
VISHAY
双路场效应管, MOSFET, N和P沟道, 8 A, 40 V, 0.02 ohm, 10 V, 1 V