ON SEMICONDUCTOR
单管二极管 齐纳, 9.1 V, 3 W, SMD, 5 %, 2 引脚, 150 °C
VISHAY
晶体管, MOSFET, P沟道, -26.6 A, -20 V, 0.0051 ohm, -4.5 V, -1.5 V
VISHAY
单管二极管 齐纳, BZG, 100 V, 3 W, DO-214AC, 5 %, 2 引脚, 150 °C
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 13 ohm, 10 V, 3.75 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223
VISHAY
晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, 4 V
VISHAY
单管二极管 齐纳, AEC-Q101, 15 V, 3 W, DO-214AC, 5 %, 2 引脚, 150 °C
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 5.1 mohm, 10 V, 1.5 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.0034 ohm, 8 V, 1.2 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 300 mA, 800 V, 13 ohm, 10 V, 3.75 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.4 A, -60 V, 0.2 ohm, -10 V, -2.5 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 87 A, 30 V, 6.4 mohm, 8 V, 1.2 V