INFINEON
晶体管, MOSFET, P沟道, -4.3 A, -12 V, 50 mohm, -4.5 V, -550 mV
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 7 A, 30 V, 0.018 ohm, 10 V, 2.6 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 30V, 5A, 3-SOT-23
DIODES INC.
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 21 mohm, 4.5 V, 500 mV
VISHAY
齐纳二极管, VZ:5.6V
DIODES INC.
晶体管, MOSFET, N沟道, 44 A, 100 V, 0.011 ohm, 10 V, 2 V
VISHAY
齐纳二极管, 4.3V
VISHAY
齐纳二极管, Vz: 20V
VISHAY
场效应管, MOSFET, P沟道
VISHAY
齐纳二极管, 1.3W, 100V, DO-41
VISHAY
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.03 ohm, -4.5 V, -1.5 V
INTERNATIONAL RECTIFIER
P CHANNEL POWER MOSFET, HEXFET, -20V, -4.3A, SOT-23
INFINEON
双路场效应管, MOSFET, 双N沟道, 5.4 A, 20 V, 0.03 ohm, 4.5 V, 1.2 V
VISHAY
场效应管, MOSFET, N沟道
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 9 A, 30 V, 0.012 ohm, 10 V, 2 V
VISHAY
单管二极管 齐纳, 62 V, 1.3 W, DO-41 (DO-204AL), 5 %, 2 引脚, 175 °C
ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 120 MHz, 1.3 W, 1 A, 140 hFE
INFINEON
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.042 ohm, -4.5 V, -1.1 V
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -4.8 A, -20 V, 21 mohm, -4.5 V, -1.5 V
VISHAY
场效应管, MOSFET, N沟道