DIODES INC.
晶体管, MOSFET, P沟道, 230 mA, -100 V, 8 ohm, -10 V, -3.5 V
NEXPERIA
单晶体管 双极, NPN, 30 V, 145 MHz, 700 mW, 4.9 A, 500 hFE
ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, NPN, 40 V, 700 mW, 200 mA, 40 hFE, SOT-23
DIODES INC.
晶体管, MOSFET, N沟道, 180 mA, 200 V, 10 ohm, 5 V, 1.5 V
NEXPERIA
单晶体管 双极, PNP, -100 V, 100 MHz, 700 mW, -4.1 A, 300 hFE
RAYCHEM - TE CONNECTIVITY
齐纳二极管, 13.4V
RAYCHEM - TE CONNECTIVITY
单管二极管 齐纳, 13.4 V, 700 mW, SMD, 3 引脚, 85 °C
RAYCHEM - TE CONNECTIVITY
单管二极管 齐纳, 13.4 V, 700 mW, SMD, 3 引脚, 85 °C
ROHM
晶体管, MOSFET, P沟道, -1.3 A, -12 V, 0.19 ohm, -4.5 V, -1 V
ROHM
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.075 ohm, -4.5 V, -1 V
ROHM
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.17 ohm, 10 V, 2.5 V
RAYCHEM - TE CONNECTIVITY
单管二极管 齐纳, 9.8 V, 700 mW, SMD, 3 引脚, 85 °C
NEXPERIA
单晶体管 双极, PNP, -20 V, 130 MHz, 700 mW, -5.5 A, 370 hFE
NEXPERIA
单晶体管 双极, NPN, 100 V, 110 MHz, 700 mW, 5.1 A, 30 hFE
DIODES INC.
晶体管, MOSFET, N沟道, 7 A, 30 V, 0.017 ohm, 10 V, 1.4 V
ON SEMICONDUCTOR/FAIRCHILD
General-Purpose Amplifier, NPN, PNP, 30 V, 700 mW, 500 A, 50, SuperSOT
DIODES INC.
晶体管, MOSFET, P沟道, -3.3 A, -40 V, 0.026 ohm, -10 V, -2.2 V
NEXPERIA
单晶体管 双极, NPN, 400 V, 30 MHz, 700 mW, 500 mA, 200 hFE
NEXPERIA
单晶体管 双极, PNP, -500 V, 50 MHz, 700 mW, -250 mA, 160 hFE
NEXPERIA
单晶体管 双极, NPN, 150 V, 30 MHz, 700 mW, 1 A, 250 hFE
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.048 ohm, -4.5 V, -1 V
ROHM
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.03 ohm, -4.5 V, -1 V