ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.038 ohm, -10 V, -2.5 V
DIODES INC.
单晶体管 双极, PNP, 40 V, 270 MHz, 1.25 W, 3 A, 450 hFE
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.04 ohm, 4.5 V, 950 mV
STMICROELECTRONICS
单晶体管 双极, PNP, 80 V, 1.25 W, 1.5 A, 40 hFE
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 0.07 ohm, 4.5 V, 1.2 V
INFINEON
晶体管, MOSFET, P沟道, 3 A, -30 V, 98 mohm, -10 V
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 15 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 175 °C
VISHAY
双路场效应管, MOSFET, 双P沟道, -1.3 A, -20 V, 0.64 ohm, -1.8 V, -400 mV
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 4.5 A, 30 V, 0.03 ohm, 4.5 V, 1.5 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.07 ohm, -4.5 V, -0.72 V
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 80 V, 1.25 W, -1.5 A, 40 hFE
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 80 V, 1.25 W, 1.5 A, 100 hFE
ROHM
晶体管, MOSFET, P沟道, -1.5 A, -100 V, 0.35 ohm, -10 V, -2.5 V
VISHAY
单管二极管 齐纳, 6.2 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 150 °C
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -30V, -2.3 A, SOT-23
VISHAY
单管二极管 齐纳, 3.9 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 150 °C
VISHAY
单管二极管 齐纳, 9.1 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 150 °C
NEXPERIA
双极晶体管阵列, AEC-Q101, NPN, PNP, 100 V, 1.25 W, 3 A, 10 hFE, SOT-1205
ON SEMICONDUCTOR/FAIRCHILD
双极性晶体管, PNP, -80V
VISHAY
晶体管, MOSFET, P沟道, -4.4 A, -40 V, 0.064 ohm, -10 V, -1.2 V