ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 50 V, 330 MHz, 15 W, 8 A, 200 hFE
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -100 V, 3 MHz, 20 W, -6 A, 15 hFE
VISHAY
场效应管, MOSFET, N沟道, 100V, 7.7A, IPAK
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 10 A, 250 V, 0.32 ohm, 10 V, 4.5 V
NTE ELECTRONICS
双极性晶体管, PNP, 400V V(BR)CEO, 2A I(C),TO-251VAR
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 950 V, 3 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.8 A, 620 V, 1.7 ohm, 10 V, 3.75 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.7 A, 620 V, 2.2 ohm, 10 V, 3.75 V
VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 9.4A, IPAK
INFINEON
功率场效应管, MOSFET, N沟道, 3.2 A, 650 V, 1.26 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 1.8 ohm, 10 V, 3 V
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.2 A, 600 V, 4 ohm, 10 V, 4 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.9 ohm, 10 V, 4 V
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 17A, IPAK
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
NTE ELECTRONICS
双极性晶体管, NPN, 50V, TO-251
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 28 A, 30 V, 0.025 ohm, 10 V, 1 V
INFINEON
功率场效应管, MOSFET, N沟道, 10.5 A, 700 V, 0.54 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 7.5 mohm, 10 V, 1 V
INFINEON
功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.8 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 4.4 A, 600 V, 0.86 ohm, 10 V, 3 V
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 17A, IPAK