VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -30 V, 24 mohm, -10 V, -3 V
VISHAY
MOSFET, N CHANNEL, 30V, 9.5A, SOIC-8
VISHAY
晶体管, MOSFET, N沟道, 13.5 A, 30 V, 0.007 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.3 A, -30 V, 0.042 ohm, -10 V, -1.7 V
VISHAY
晶体管, MOSFET, N沟道, 32.1 A, 60 V, 0.0035 ohm, 10 V
INFINEON
晶体管, MOSFET, P沟道, -20 A, -30 V, 3.9 mohm, -10 V, -1.8 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 29 mohm, 10 V, 1 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.3 A, 60 V, 46 mohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, P沟道, 16 A, -12 V, 7 mohm, -4.5 V, -900 mV
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 3.7 A, 30 V, 0.06 ohm, 10 V, 1.7 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 6.5 A, 30 V, 29 mohm, 10 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11 A, -30 V, 0.0108 ohm, -10 V, -2 V
VISHAY
晶体管, MOSFET, N沟道, 14 A, 30 V, 11.5 mohm, 10 V, 1.8 V
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
INFINEON
晶体管, MOSFET, P沟道, -6.2 A, -40 V, 0.025 ohm, -10 V, -3 V
VISHAY
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0037 ohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, P沟道, 4.6 A, -30 V, 70 mohm, -10 V, -3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 60 V, 14 mohm, 10 V, 2.4 V
INFINEON
晶体管, MOSFET, P沟道, -10 A, -30 V, 20 mohm, 10 V, -1 V
ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, PNP, -60 V, 1 W, -600 mA, 50 hFE, SOIC
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
INFINEON
双路场效应管, MOSFET, N和P沟道, 4.7 A, 55 V, 50 mohm, 10 V, 1 V