ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, 30V V(BR)DSS
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, 双N沟道, 7.6 A, 30 V, 0.022 ohm, 10 V, 1 V
TEXAS INSTRUMENTS
达林顿晶体管阵列, NPN, 7, 50V
VISHAY
晶体管, MOSFET, N沟道, 36 A, 40 V, 0.0027 ohm, 10 V, 2.5 V
INFINEON
场效应管, MOSFET, P沟道, -40V, 10.5A, SOIC
VISHAY
场效应管, MOSFET, NP通道, 40V, 10/-9.2A, SOIC-8
INFINEON
晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0093 ohm, 10 V, 1.8 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, 40V, SOIC
ON SEMICONDUCTOR/FAIRCHILD
双极性晶体管, NPN, 40V, SOIC
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.019 ohm, 10 V, 1.9 V
VISHAY
晶体管, MOSFET, N沟道, 3 A, 150 V, 68 mohm, 10 V, 2 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -11.4 A, -30 V, 10 mohm, -10 V, -2.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.6 A, 40 V, 0.021 ohm, 10 V, 1.9 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 10.2A, SOIC
DIODES INC.
晶体管, MOSFET, N沟道, 7.6 A, 60 V, 0.015 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 14.1 A, 30 V, 0.0036 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.017 ohm, 10 V, 1.7 V
VISHAY
晶体管, MOSFET, N沟道, 6.7 A, 150 V, 0.041 ohm, 10 V, 4.5 V
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 950 mW, 500 mA, SOIC
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.9 A, -30 V, 0.095 ohm, -10 V, -1.8 V
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 55V, SOIC
VISHAY
晶体管, MOSFET, N沟道, 18 A, 150 V, 0.07 ohm, 10 V, 3 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 5 A, 55 V, 0.031 ohm, 10 V, 1.6 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N+P沟道, 30V, SOIC