DIODES INC.
晶体管, MOSFET, P沟道, -7.3 A, -30 V, 0.013 ohm, -20 V, -1.7 V
DIODES INC.
单晶体管 双极, 达林顿, PNP, -120 V, 160 MHz, 1 W, -1 A, 3000 hFE
DIODES INC.
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.025 ohm, -10 V, -1.4 V
DIODES INC.
单晶体管 双极, NPN, 50 V, 125 MHz, 1.2 W, 5 A, 350 hFE
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 260 mA, 30 V, 2.8 ohm, 10 V, 1.5 V
DIODES INC.
单晶体管 双极, PNP, -100 V, 200 MHz, 625 mW, -1 A, 300 hFE
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5.4 A, -30 V, 0.045 ohm, -10 V, -1 V
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双P沟道, -2 A, -20 V, 0.15 ohm, -4.5 V, -1 V
DIODES INC.
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.092 ohm, -4.5 V, -1 V
DIODES INC.
单晶体管 双极, PNP, 60 V, 150 MHz, 350 mW, 1 A, 100 hFE
DIODES INC.
晶体管, MOSFET, P沟道, 450 mA, -60 V, 5 ohm, -10 V, -3.5 V
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 7 A, 40 V, 50 mohm, 10 V, 1 V
DIODES INC.
晶体管, MOSFET, P沟道, -7.2 A, -40 V, 0.041 ohm, -10 V, -3 V
DIODES INC.
单晶体管 双极, PNP, -65 V, 200 MHz, 200 mW, -100 mA, 290 hFE
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 845 mA, 20 V, 0.3 ohm, 4.5 V, 1 V
DIODES INC.
单晶体管 双极, NPN, 100 V, 130 MHz, 3 W, 6 A, 200 hFE
DIODES INC.
单晶体管 双极, 达林顿, NPN, 80 V, 150 MHz, 1 W, 1 A, 5000 hFE
DIODES INC.
单晶体管 双极, PNP, -400 V, 50 MHz, 1 W, -200 mA, 100 hFE
DIODES INC.
晶体管, MOSFET, P沟道, -950 mA, -20 V, 150 mohm, -4.5 V, -1 V
DIODES INC.
单晶体管 双极, NPN, 160 V, 300 mW, 600 mA, 80 hFE
DIODES INC.
晶体管, MOSFET, P沟道, 900 mA, -20 V, 600 mohm, 4.5 V, -700 mV
DIODES INC.
晶体管, MOSFET, N沟道, 1 A, 60 V, 1.5 ohm, 10 V, 3 V
DIODES INC.
双极晶体管阵列, 双路补偿高增益, NPN, PNP, 40 V, 2.75 W, 2 A, 500 hFE, SOT-223
DIODES INC.
单晶体管 双极, NPN, 180 V, 70 MHz, 2 W, 500 mA, 500 hFE