ROHM
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.022 ohm, 10 V, 2.5 V
ROHM
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.02 ohm, 10 V, 2.5 V
VISHAY
双路场效应管, MOSFET, N沟道, 6 A, 30 V, 0.0155 ohm, 10 V, 2.2 V
ROHM
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.023 ohm, 10 V, 2.5 V
ROHM
双路场效应管, MOSFET, 双N沟道, 3.5 A, 30 V, 0.07 ohm, 10 V, 2.5 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 24 A, 30 V, 0.0059 ohm, 10 V, 1.2 V
ROHM
双路场效应管, MOSFET, 双N沟道, 9 A, 30 V, 0.0165 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, DUAL N CHANNEL, 30V, 0.0013OHM, 60A, POWER 56-8
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 4.8 A, 30 V, 0.032 ohm, 10 V, 1.9 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 7.5A, SOIC-8, 整卷
VISHAY
场效应管, MOSFET, N沟道+P沟道, 30V, 4.9A, SOIC-8, 整卷
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 28 mohm, 10 V, 1.9 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 8.6 A, 30 V, 17 mohm, 10 V, 1.6 V
NXP
场效应管阵列, MOSFET, N与P沟道, 30V, 3.5A, 8-SOIC
VISHAY
Transistor Polarity:Dual N Channel
PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, N和P沟道, 100 mA, 30 V, 2 ohm, 4 V, 1 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 250 mA, 30 V, 1 ohm, 4 V, 1.2 V
ON SEMICONDUCTOR
Dual MOSFET, N and P Complement, 250 mA, 30 V, 1 ohm, 4.5 V, 1.2 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 20 A, 30 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双 N+P 30V
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 3 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 电源沟槽, 双N沟道, 201 A, 30 V, 0.00077 ohm, 10 V, 1.5 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0053 ohm, 10 V, 1.2 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 0.0119 ohm, 8 V, 950 mV