VISHAY
MOSFET, P CHANNEL, -60V, -190mA, SC-89-6
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4 A, 20 V, 45 mohm, 4.5 V, 1.2 V
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 3.98 A, 30 V, 0.033 ohm, 10 V, 1 V
VISHAY
MOSFET, DUAL N CHANNEL, 20V, 4.1A, TSSOP-8
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 1 V
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 364 mohm, 4.5 V, 1.5 V
MICRO COMMERCIAL COMPONENTS
场效应管, 双路, N通道, MOSFET, 60V, 115MA, SOT-3
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, DUAL N CHANNEL, 20V, 0.16OHM, 1.2A, SC-70-6
VISHAY
双路场效应管, MOSFET, N和P沟道, 1.2 A, 20 V, 0.132 ohm, 4.5 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV
VISHAY
场效应管, MOSFET, 双路N沟道, 20V, 5.2A, TSSOP-8
INFINEON
双路场效应管, MOSFET, 双N沟道, 10 A, 30 V, 0.0122 ohm, 10 V, 1.8 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 1.8 A, 30 V, 0.145 ohm, 10 V, 2.6 V
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 50V, SOIC
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.024 ohm, 10 V, 1.8 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 700 mA, 450 V, 9.3 ohm, 10 V, 4.5 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 250 mA, 30 V, 1 ohm, 4 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 电源沟槽, 双N沟道, 103 A, 40 V, 0.002 ohm, 10 V, 2 V
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 9 A, 30 V, 0.012 ohm, 10 V, 2 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 304 mA, 60 V, 1 ohm, 10 V, 1.7 V
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
DIODES INC.
双路场效应管, MOSFET, 双P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 21 A, 30 V, 0.0095 ohm, 10 V, 2 V
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 40 A, 40 V, 0.0058 ohm, 10 V, 3 V