ON SEMICONDUCTOR
Dual MOSFET, N and P Channel, 2.6 A, 30 V, 52 mohm, 4.5 V, 900 mV
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 2.1 V
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 3 A, 30 V, 0.09 ohm, 10 V, 1.7 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 17 A, 30 V, 0.0055 ohm, 4.5 V, 1.2 V
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 380 mohm, 10 V, 2.5 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 30 V, 0.0049 ohm, 8 V, 900 mV
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.033 ohm, 10 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 750 mA, 30 V, 0.25 ohm, 4.5 V, 1 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 25 A, 30 V, 0.0076 ohm, 10 V, 2.5 V
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 3.3 A, 30 V, 0.072 ohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.029 ohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.029 ohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, 互补晶体管, N和P沟道, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.0125 ohm, 10 V, 2 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V
TEXAS INSTRUMENTS
功率场效应管, N沟道, 同步降压, NEXFET, 30V, 40A, SON-8, 整卷
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 14 A, 30 V, 0.0066 ohm, 10 V, 1.8 V
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.028 ohm, 10 V, 1 V
DIODES INC.
双路场效应管, MOSFET, 增强模式, N和P沟道, 8.6 A, 30 V, 0.025 ohm, 10 V, 1 V
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 21 A, 30 V, 0.0095 ohm, 10 V, 2 V
PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, 双N沟道, 100 mA, 30 V, 2 ohm, 4 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.095 ohm, 10 V, 1.8 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.095 ohm, 10 V, 1.8 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 2.5 A, 30 V, 0.082 ohm, 10 V, 1.8 V