INFINEON
双路场效应管, MOSFET, 双N沟道, 11 A, 30 V, 0.0098 ohm, 10 V, 1.8 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N/P沟道 2W, 8-SOIC, SMD
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 220 mA, 20 V, 0.75 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3 A, 20 V, 70 mohm, 4.5 V, 900 mV
INFINEON
双路场效应管, MOSFET, 双P沟道, -8 A, -30 V, 0.017 ohm, -10 V, -2.5 V
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.5 A, 25 V, 0.083 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 100 mohm, 10 V, 1.7 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 2.7 A, 30 V, 110 mohm, 10 V, 1 V
VISHAY
场效应管, MOSFET, N沟道与P沟道, 40V, 6.8A, SOIC-8
VISHAY
双路场效应管, MOSFET, 双N沟道, 2.9 A, 30 V, 0.072 ohm, 10 V, 1 V
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -200 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, SOIC
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 10 A, 24 V, 0.0105 ohm, 4.5 V, 1.3 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.018 ohm, 10 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 3.7 A, 30 V, 0.047 ohm, 4.5 V, 700 mV
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -4.4 A, -20 V, 0.037 ohm, -4.5 V, -1 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 350 mA, 30 V, 2.9 ohm, 4 V, 1.3 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 10 A, 24 V, 0.0093 ohm, 4.5 V, 1.3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 电源沟槽, 双N沟道, 98 A, 40 V, 0.002 ohm, 10 V, 2 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 7.3 A, 30 V, 0.0175 ohm, 10 V, 1.1 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 9 A, 24 V, 0.012 ohm, 4.5 V, 1.3 V