DIODES INC.
双路场效应管, MOSFET, 双P沟道, -4.5 A, -20 V, 0.04 ohm, -4.5 V, -1 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 3.7 A, 30 V, 0.047 ohm, 4.5 V, 700 mV
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -4.4 A, -20 V, 0.037 ohm, -4.5 V, -1 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 350 mA, 30 V, 2.9 ohm, 4 V, 1.3 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 7.3 A, 30 V, 0.0175 ohm, 10 V, 1.1 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -600 mA, -20 V, 0.3 ohm, -4.5 V, -1.2 V
NEXPERIA
双路场效应管, MOSFET, AEC-Q101, 双PNP
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, DUAL N CHANNEL, 60V, 1.6OHM, 280mA, SOT-563F-6
PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, 双N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 750 mA, 30 V, 0.25 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道与P沟道, 30V, 0.25/0.87Ω, 750mA, SC-70-6
INFINEON
双路场效应管, MOSFET, N和P, 2.3 A, 30 V, 0.044 ohm, 10 V, 1.6 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 2 A, 20 V, 0.105 ohm, 4.5 V, 1.3 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 480 mA, 30 V, 0.54 ohm, 10 V, 1 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 30 V, 0.027 ohm, 10 V, 1.6 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.3 A, -30 V, 0.069 ohm, -10 V, -1.9 V
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 260 mA, 30 V, 2.8 ohm, 10 V, 1.5 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1 A, 100 V, 500 mohm, 10 V, 2.6 V
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 3.4 A, 30 V, 0.038 ohm, 10 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 280 mA, 60 V, 1.6 ohm, 5 V, 1.76 V
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 870 mA, 20 V, 0.3 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 3 A, -30 V, 170 mohm, -10 V, -1.8 V
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 180 mA, 30 V, 2.7 ohm, 10 V, 1.2 V