VISHAY
晶体管, 双N&P沟道
INFINEON
场效应管, MOSFET, 双N/P沟道 2W, 8-SOIC
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 6 A, -20 V, 0.024 ohm, -4.5 V, -800 mV
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 2 A, 42 V, 0.165 ohm, 10 V, 1.8 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 3 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 4.7 A, 55 V, 0.043 ohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, 双P沟道, -9.2 A, -30 V, 0.013 ohm, -10 V, -1.8 V
INFINEON
双路场效应管, MOSFET, P沟道, -8 A, -30 V, 0.017 ohm, -10 V, -1.8 V
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 3 A, 30 V, 0.09 ohm, 10 V, 1.7 V
DIODES INC.
晶体管, MOSFET, 双N沟道, 7.5 A, 40 V, 0.015 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 35V, SOIC
DIODES INC.
双路场效应管, MOSFET, P沟道, -5.2 A, -60 V, 0.034 ohm, -10 V, -3 V
VISHAY
MOSFET, DUAL P CHANNEL, -20V, 0.0275OHM, -8A, SOIC-8
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7 A, 35 V, 24 mohm, 10 V, 2 V
VISHAY
MOSFET, P CHANNEL, -20V, -4.9A, SOIC-8
INFINEON
双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.11 ohm, 10 V, 3 V
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.033 ohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, 双P沟道, -4.3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
INFINEON
双路场效应管, MOSFET, 双P沟道, -4.3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
INFINEON
双路场效应管, MOSFET, 双P沟道, -4.9 A, -30 V, 0.042 ohm, -10 V, -1 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.029 ohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.029 ohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 5.1 A, 55 V, 0.043 ohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.105 ohm, -10 V, -1 V