INFINEON
功率场效应管, MOSFET, N沟道, 17.5 A, 700 V, 0.171 ohm, 10 V, 4 V
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 4 V
WOLFSPEED
Silicon Carbide Power MOSFET, N Channel, 22 A, 1 kV, 0.12 ohm, 15 V, 2.1 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 36 A, 600 V, 0.081 ohm, 10 V, 2 V
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.28 ohm, 10 V, 3 V
ROHM
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 5 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
WOLFSPEED
功率场效应管, MOSFET, N沟道, 35 A, 1 kV, 0.065 ohm, 15 V, 2.1 V
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 150 mohm, 10 V, 5 V
VISHAY
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 650 mohm, 10 V, 3.75 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.85 ohm, 10 V, 5 V
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V
GENESIC SEMICONDUCTOR
碳化硅结晶体管, 1.2KV, 10A, TO-263
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V
GENESIC SEMICONDUCTOR
碳化硅结晶体管, 1.2KV, 5A, TO-263
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.095 ohm, 10 V, 4 V
VISHAY
MOSFET, N CHANNEL, 600V, 15A, TO-263-3
VISHAY
场效应管, MOSFET, N沟道, 600V, 12A, TO-263-3