VISHAY
晶体管, MOSFET, P沟道, 3.6 A, -200 V, 1.5 ohm, -10 V, -4 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 5.3A, SOIC
ROHM
晶体管, MOSFET, P沟道, -250 mA, -30 V, 0.9 ohm, -10 V, -2.5 V
INFINEON
晶体管, MOSFET, P沟道, 14 A, -100 V, 200 mohm, -10 V, -4 V
VISHAY
MOSFET, P CHANNEL, -60V, -1.8A, SOT-223-4
VISHAY
晶体管, MOSFET, P沟道, -6.8 A, -100 V, 600 mohm, -10 V, -4 V
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -6 A, -60 V, 0.037 ohm, -10 V, -3 V
VISHAY
晶体管, MOSFET, P沟道, -2.2 A, -80 V, 0.216 ohm, -10 V, -4 V
VISHAY
晶体管, MOSFET, P沟道, -75 A, -30 V, 5.5 mohm, -10 V, -1 V
INFINEON
晶体管, MOSFET, P沟道, -18.7 A, -60 V, 0.102 ohm, -10 V, -2.7 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 400 mA, -20 V, 800 mohm, -10 V, -1.9 V
VISHAY
场效应管, MOSFET, P沟道
INFINEON
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.06 ohm, -10 V, -2.5 V
VISHAY
场效应管, P通道, MOSFET, -100V, 6.8A, D2-PAKT
VISHAY
晶体管, MOSFET, P沟道, 2.8 A, -100 V, 1.2 ohm, -10 V, 4 V
INFINEON
晶体管, MOSFET, P沟道, -40 A, -100 V, 60 mohm, -10 V, -4 V
VISHAY
晶体管, P沟道
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 12A, TO-220AB
INFINEON
晶体管, MOSFET, P沟道, 13 A, -150 V, 290 mohm, -10 V, -4 V
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -200 V, 10 ohm, -10 V, -2.8 V
VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -60 V, 0.1 ohm, -10 V, -3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 16.5 A, -100 V, 190 mohm, -10 V, -4 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.05 ohm, -10 V, -1 V
STMICROELECTRONICS
晶体管, MOSFET, P沟道, -10 A, -60 V, 0.18 ohm, -10 V, -4 V
VISHAY
Transistor Polarity:P Channel