NEXPERIA
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.03 ohm, -4.5 V, -700 mV
VISHAY
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 0.11 ohm, -2.5 V, -400 mV
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -40V, 0.011Ω, -10.8A, SOIC-8
INFINEON
晶体管, MOSFET, N沟道, 9.4 A, 40 V, 0.0117 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, P沟道, 6.2 A, -40 V, 41 mohm, -10 V, -3 V
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -250 V, 10 ohm, -10 V, -2.8 V
VISHAY
P CHANNEL MOSFET, -8V, 13.7A, SOIC
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.2 A, 30 V, 65 mohm, 4.5 V, 700 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 170 mA, 100 V, 2.98 ohm, 10 V, 1.405 V
NEXPERIA
晶体管, MOSFET, P沟道, -11.8 A, -12 V, 0.015 ohm, -4.5 V, -680 mV
DIODES INC.
晶体管, MOSFET, P沟道, -2.7 A, -20 V, 100 mohm, -4.5 V, -890 mV
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0051 ohm, 10 V, 4 V
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 340 mA, 60 V, 1.19 ohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 55 A, 30 V, 0.0062 ohm, 10 V, 2.35 V
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 25A, D-PAK
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 25V, 5.8A, 3-SOT-23
VISHAY
场效应管, MOSFET, N沟道, 30V, 4.5A, TO-236
VISHAY
MOSFET, N CHANNEL, 40V, 60A, POWERPAK SO-8
VISHAY
晶体管, MOSFET, P沟道, -4.4 A, -20 V, 0.05 ohm, -4.5 V, -400 mV
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 2.2 A, 60 V, 0.107 ohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0093 ohm, 10 V, 1.8 V
VISHAY
场效应管, MOSFET, N沟道, 75V, 60A, SOIC-8
NEXPERIA
晶体管, MOSFET, P沟道, -5 A, -20 V, 0.034 ohm, -4.5 V, -700 mV
INFINEON
晶体管, MOSFET, P沟道, -780 mA, -20 V, 0.6 ohm, -4.5 V, -1.5 V