DIODES INC.
晶体管, MOSFET, P沟道, 4.2 A, -20 V, 45 mohm, -4.5 V, -500 mV
MICROCHIP
MOSFET, N CHANNEL, 500V, 0.013A, TO-236AB-3
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 255 mA, 20 V, 1.6 ohm, 4.5 V, 1.3 V
VISHAY
晶体管, MOSFET, N沟道, 240 mA, 60 V, 1 ohm, 10 V, 2 V
NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -30 V, 0.43 ohm, -4.5 V, -700 mV
INFINEON
晶体管, MOSFET, N沟道, 8.2 A, 30 V, 0.015 ohm, 10 V, 1.8 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3.9 V
NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -30 V, 0.43 ohm, -4.5 V, -700 mV
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6.3 A, 30 V, 0.011 ohm, 10 V, 1.9 V
VISHAY
MOSFET, N CHANNEL, 30V, 3.6A, SOT-23-3
VISHAY
晶体管, MOSFET, N沟道, 2.2 A, 150 V, 0.112 ohm, 10 V, 4 V
DIODES INC.
晶体管, MOSFET, N沟道, 270 mA, 60 V, 7.5 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 3.5A SOT-23
VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.062 ohm, 4.5 V, 1.5 V
VISHAY
晶体管, P沟道
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 1.9 A, -20 V, 0.127 ohm, -4.5 V, -900 mV
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 双N/P沟道 2W, 8-SOIC
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 890 mA, 20 V, 0.2 ohm, 4.5 V, 1.2 V
VISHAY
场效应管, MOSFET, N沟道, 240V, 200mA, TO-236
VISHAY
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 90 mohm, -4.5 V, -400 mV
VISHAY
双路场效应管, MOSFET, 双N沟道, 60 A, 25 V, 0.0038 ohm, 10 V, 2.2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 13 mohm, 10 V, 1.8 V
VISHAY
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00065 ohm, 10 V, 2 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
VISHAY
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.00115 ohm, 10 V, 2.1 V