产品分类：MOSFET晶体管,规格：功耗 Pd 180W,
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 15A, TO-220AB-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 85 A, 55 V, 0.011 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 116 A, 30 V, 0.007 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, 通用, P沟道, 21 A, -100 V, 200 mohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 57A, TO-247AC
VISHAY
功率场效应管, MOSFET, N沟道, 6 A, 1 kV, 2 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 600 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 200 V, 75 mohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 580 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 200 V, 0.06 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V, 25.5A, TO-220
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 6 A, 1 kV, 2 ohm, 10 V, 4.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 15A, TO-263-3
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 30 V, 0.007 ohm, 10 V, 1 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET
(EN)
