产品分类：MOSFET晶体管,规格：功耗 Pd 3.2W,
VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -150 V, 0.61 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7.6 A, 60 V, 0.019 ohm, 10 V, 2.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 6A, POWERPAK
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 950 μohm, 10 V, 1.4 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 30 V, 1.2 mohm, 8 V, 1.1 V
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 100A, 950uOHM, SON-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.9 mohm, 8 V, 1.1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0018 ohm, 10 V, 1.8 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00099 ohm, 10 V, 1.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 16 A, 40 V, 0.0058 ohm, 10 V, 2.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.97 A, -20 V, 50 mohm, -4.5 V, -600 mV
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, SON-8
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 276 A, 60 V, 0.00093 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0047 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -6 A, -60 V, 0.037 ohm, -10 V, -3 V
(EN)TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 100A, 0.0025Ω, SON-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0032 ohm, 10 V, 1.3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -40 V, 0.021 ohm, -10 V, -1.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -150 V, 0.61 ohm, -10 V, -4 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 8A POWERPAK
(EN)TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 25V, 100A, 0.0009Ω, SON-8
(EN)TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 40V, 100A, 0.0018Ω, SON-8
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 8 A, 40 V, 0.02 ohm, 10 V, 1 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -40 V, 0.021 ohm, -10 V, -1.2 V
(EN)
