INFINEON
晶体管 双极-射频, NPN, 2.5 V, 45 GHz, 125 mW, 50 mA, 70 hFE
INFINEON
晶体管, MOSFET, N沟道, 540 mA, 55 V, 0.346 ohm, 10 V, 1.6 V
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, AEC-Q101, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
ON SEMICONDUCTOR
单晶体管 双极, NPN, 65 V, 100 MHz, 225 mW, 100 mA, 110 hFE
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.6 V
INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0112 ohm, 10 V, 1.5 V
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
INFINEON
晶体管, MOSFET, P沟道, -18.6 A, -60 V, 0.1 ohm, -10 V, -3 V
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
ON SEMICONDUCTOR
单晶体管 双极, NPN, 45 V, 100 MHz, 300 mW, 500 mA, 160 hFE
INFINEON
晶体管 双极-射频, AEC-Q101, NPN, 9 V, 14 GHz, 210 mW, 35 mA, 120 hFE
ON SEMICONDUCTOR
双极晶体管阵列, 双路N和P通道, 30 V, 380 mW, 100 mA, 420 hFE, SOT-363
ON SEMICONDUCTOR
双极晶体管阵列, NPN, PNP, 65 V, 380 mW, 100 mA, 200 hFE, SOT-363
VISHAY
晶体管, MOSFET, P沟道, -12 A, -200 V, 0.178 ohm, -10 V, -3 V
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
ON SEMICONDUCTOR
双极晶体管阵列, 双PNP, -65 V, 380 mW, 100 mA, 150 hFE, SOT-363
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 55 V, 0.053 ohm, 10 V, 1.6 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.029 ohm, 10 V, 1.6 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 13 A, 30 V, 0.0081 ohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, P沟道, -78.6 A, -30 V, 0.0061 ohm, -10 V, -2.5 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -14 A, -60 V, 0.037 ohm, -10 V, -3 V
ON SEMICONDUCTOR
场效应管, MOSFET
INFINEON
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0258 ohm, 10 V, 1.7 V