ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, AEC-Q101, N沟道, 30 A, 80 V, 0.0172 ohm, 10 V, 2.9 V
INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 0.021 ohm, 10 V, 2 V
INFINEON
晶体管 双极-射频, NPN, 4.1 V, 42 GHz, 200 mW, 50 mA, 110 hFE
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率
ON SEMICONDUCTOR
单晶体管 双极, PNP, -40 V, 100 MHz, 540 mW, -2 A, 150 hFE
VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0037 ohm, 10 V, 2 V
ROHM
晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
INFINEON
晶体管 双极-射频, NPN, 2.3 V, 65 GHz, 185 mW, 80 mA, 110 hFE
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -40 V, 250 MHz, 200 mW, -200 mA, 30 hFE
DIODES INC.
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 0.062 ohm, -4.5 V, -1.01 V
ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 1 kohm, 10 kohm, 0.1 电阻比率
ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 电阻比率
ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -500 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率
NEXPERIA
晶体管, MOSFET, N沟道, 800 mA, 60 V, 0.3 ohm, 10 V, 1.7 V
NEXPERIA
双路场效应管, MOSFET, AEC-Q101, 双PNP
VISHAY
晶体管, MOSFET, N沟道, 23 A, 60 V, 0.0272 ohm, 10 V, 2 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7.6 A, 60 V, 0.019 ohm, 10 V, 2.5 V
VISHAY
MOSFET, P-CH, -40V, -30A, POWERPAK SO
INFINEON
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.054 ohm, -4.5 V, -900 mV
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.213 电阻比率
INFINEON
双路场效应管, MOSFET, N和P, 2.3 A, 30 V, 0.044 ohm, 10 V, 1.6 V
INFINEON
晶体管 双极-射频, NPN, 15 V, 5 GHz, 280 mW, 45 mA, 70 hFE
NEXPERIA
晶体管, MOSFET, N沟道, 2.1 A, 60 V, 0.096 ohm, 10 V, 1.7 V
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 35 A, 100 V, 0.0225 ohm, 10 V, 4 V
ROHM
晶体管 双极预偏置/数字, 单路NPN, 40 V, 500 mA, 2.2 kohm